LEAF-2D (801389)

  https://cordis.europa.eu/project/id/801389

  Horizon 2020 (2014-2020)

  Laser EnAbled TransFer of 2D Materials

  FET-Open research and innovation actions (FETOPEN-01-2016-2017)

  graphene  ·  sensors  ·  semiconductivity  ·  additive manufacturing  ·  laser physics

  2018-11-01 Start Date (YY-MM-DD)

  2022-04-30 End Date (YY-MM-DD)

  € 2,851,030 Total Cost


  Description

2D Layered Materials (2D LM) hold enormous promise for enabling new device concepts and novel applications, owing to their planar nature and their exquisite, tuneable properties. Despite the rapid advancement of many aspects of Layered Materials (LM) technology, many emerging applications are hampered by the lack of an efficient, defect-free and controllable technique for the transfer of pixels of LM onto desired substrates. The core concept of this proposal is the development of a novel nano-manufacturing technology based on laser transfer techniques, which will enable the rapid, intact transfer and engineering of 2D stacks and heterostructures for optoelectronic, photonic and organic electronic devices. To achieve this, we will benefit from the unique advantages of the Laser Induced Backward Transfer (LIBT) and Laser Induced Forward Transfer (LIFT) techniques, which among other attributes, offer the capability for intact transfer of any 2D LM with high lateral resolution (micron scale), the transfer of 2D heterostructures and compatibility with a variety of substrates, including Si and flexible substrates. The implementation of the proposed technology will offer a chemical- and defect -free transfer of 2D monolayers with high precision: exquisitely clean Si-2D semiconductor (SC) heterostructures will be demonstrated using LDT and enable the fabrication of Near-IR Si emitters. Single layer and defect – free Graphene pixels will be printed on flexible substrates for highly sensitive ultra-thin sensors. These breakthroughs in the fields of Si emitters and flexible touch sensors will validate the importance of LEAF-2D and facilitate the incorporation of 2D materials in a plethora of emerging technological fields.


  Complicit Organisations

2 Israeli organisations participate in LEAF-2D.

Country Organisation (ID) VAT Number Role Activity Type Total Cost EC Contribution Net EC Contribution
Greece ETHNICON METSOVION POLYTECHNION (999978142) EL099793475 coordinator HES € 634,625 € 634,625 € 634,625
Spain GRAPHENEA SA (971995582) ESA75022608 participant PRC € 0 € 0 € 0
Israel BAR ILAN UNIVERSITY (999886574) IL580063683 participant HES € 719,250 € 719,250 € 719,250
United Kingdom UNIVERSITY OF SOUTHAMPTON (999975329) GB568630414 participant HES € 583,780 € 583,780 € 583,780
Israel MELLANOX TECHNOLOGIES LTD - MLNX (990560024) IL512763285 participant PRC € 497,500 € 497,500 € 497,500
Spain GRAPHENEA SEMICONDUCTOR SL (910983940) ESB75183202 participant PRC € 300,000 € 300,000 € 300,000
Greece EXELIXIS DIACHEIRISI EREVNAS KAI EPIKOINONIA EE (949673748) EL800521378 participant PRC € 115,875 € 115,875 € 115,875