GCRAM (101187897)

  https://cordis.europa.eu/project/id/101187897

  Horizon Europe (2021-2027)

  Full qualification, testing and commercial deployment of a unique on-chip memory technology offering the highest-density embedded memory in a standard CMOS process

  EIC Accelerator Open 2024 (HORIZON-EIC-2024-ACCELERATOROPEN-01)

  optical sensors

  2024-07-01 Start Date (YY-MM-DD)

  2026-06-30 End Date (YY-MM-DD)

  € 0 Total Cost

  Description

The Memory Bottleneck has become a major concern in modern Systems-on-a-Chip and hence, the size of on-chip embedded memory continues to increase, already reaching up to 75% of the total SoC real estate. However, the industry standard SRAM technology is very area-inefficient and has been facing major scaling difficulties in modern process technologies (beyond 10nm). RAAAM’s Gain-Cell Random Access Memory (GCRAM) technology is a unique on-chip memory solution that only requires 2-3 transistors to store a bit of data, as opposed to 6-8 transistors needed for the existing SRAM-based highest-density memory technology. The solution is area efficient, cost-effective and can be manufactured using the standard CMOS process. Having successfully tested the technology in various nodes ranging from 180nm-16nm, RAAAM currently aims to develop, fabricate, and characterize the proposed memory technology for nodes ≤5nm and to fully qualify it for production according to industry standards

  Complicit Organisations

1 Israeli organisation participates in GCRAM.